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The MMUN2114LT1G is a single PNP Bias Resistor Transistor (BRT) in an SOT-23 package. It integrates a transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and power dissipation of 246 mW at 25°C. The typical input resistance is 10 kOhms with a resistor ratio of 0.21. DC current gain is minimum 80 at 5.0 mA. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix 'LT1G' corresponds to the SOT-23 package and tape & reel shipping configuration. Confirm RoHS compliance status as indicated in the manufacturer's documentation. Ensure the part marking 'A6D' matches the received device for identification purposes.
Select this component when a PNP digital transistor with a 10 kOhm base resistor is required. The integrated bias network simplifies design compared to discrete solutions. Verify that the 50 V collector-emitter voltage rating meets the circuit requirements. Consider the SOT-23 package dimensions for PCB layout constraints.
This device belongs to the MUN2114L series of digital transistors manufactured by onsemi. It is functionally equivalent to other part numbers in the same family, such as MUN2114T1G in SC-59 or MUN5114T1G in SC-70 packages, which share identical electrical characteristics but differ in physical packaging.
MMUN2114LT3G