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The MMUN2114LT3G is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 Vdc, continuous collector current of 100 mAdc, and power dissipation of 246 mW at 25°C. The typical input resistance (R1) is 10 kOhms with a resistor ratio (R1/R2) of 0.21. The device operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix 'LT3G' against the manufacturer's official documentation to confirm the tape and reel quantity and shipping configuration. Confirm that the device marking corresponds to the specified part number for accurate identification during assembly and inspection processes.
Select this component when a PNP BRT with a 10 kOhm base resistor is required. Ensure the application voltage does not exceed the 50 Vdc collector-emitter rating. Consider the SOT-23 package dimensions for PCB layout constraints and verify thermal dissipation requirements relative to ambient temperature conditions.
This component belongs to the MUN2114/DTA114Y family of digital transistors. It shares functional characteristics with variants such as MMUN2114LT1G and MUN2114T1G, differing primarily in packaging style and shipping quantities. The datasheet covers multiple devices within this series, including NPN counterparts like DTA114YE.
MMUN2114LT1G