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The MMUN2116LT1G is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and an open base-emitter path. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device power dissipation (PD) of 246 mW at 25°C. The typical input resistance (R1) is 4.7 kOhms. The DC current gain (hFE) has a minimum value of 160. The operating temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. The 'LT1' designation typically indicates tape and reel shipping quantities. Confirm RoHS compliance status through the manufacturer's current product specifications or datasheet revision notes before finalizing procurement plans.
Select this component when a PNP digital transistor with a 4.7 kOhm base resistor is required. Ensure the circuit design accommodates the 50 V collector-emitter voltage limit and 100 mA current rating. Verify that the SOT-23 package dimensions fit the available PCB footprint and that the thermal requirements align with the specified power dissipation characteristics.
This part belongs to the MMUN21xxLT1 series of PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. The series is designed to simplify circuit design by eliminating external bias resistors. Other members in this family include variants like MMUN2111LT1 and MMUN2113LT1, which differ primarily in their internal resistor values.
Direct substitutes within the same series include MMUN2116LT1G, which shares identical electrical characteristics and pinout. Cross-referencing with other manufacturers' BRTs requires verifying matching R1 values, hFE ranges, and voltage/current ratings to ensure functional compatibility.