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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2116LT1G is a single PNP digital transistor (BRT) manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It integrates a built-in bias resistor network with a typical input resistance of 4.7 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 160 and a power dissipation rating of 246 mW. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single PNP transistor with a built-in bias resistor network for simplified circuit design.
- Provides high current gain capability suitable for efficient switching applications.
- Utilizes a compact SOT-23-3 surface-mount package for space-constrained PCB layouts.
Applications
- General-purpose switching circuits
- Driver stages for logic interfaces
- Level shifting applications
Procurement Notes
Verify the component authenticity against official onsemi documentation. Confirm that the SOT-23-3 package dimensions and pinout match the specific datasheet requirements for the target application. Ensure compliance with RoHS standards as indicated in the product specifications.
Selection Notes
Select this component when a PNP configuration with integrated biasing is required. The 4.7 kOhm internal resistor value dictates the base drive characteristics. Consider the 50 V voltage rating and 100 mA current limit to ensure operation within safe boundaries for the intended load.
Part Context
This part belongs to the MMUN2116L series of digital transistors from onsemi. It is designed as a replacement for discrete resistor-transistor networks, reducing component count and assembly time. The series is characterized by consistent electrical performance across the operating temperature range.
Replacement Considerations
Direct substitutes may include other PNP BRTs with similar VCEO, Ic, and R1 values. Verify pin compatibility and thermal characteristics before substitution. Cross-reference with onsemi's equivalent product listings for confirmed alternatives.
