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The MMUN2130LT1G is a single PNP digital transistor manufactured by onsemi, designed to replace discrete biasing networks. It integrates a BJT with internal resistors in an SOT-23-3 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (Ic) of 100 mA. The device features a typical base resistor (R1) of 4.7 kOhms and an emitter resistor (R2) of 47 kOhms, resulting in a resistance ratio of approximately 0.02. Minimum DC current gain (hFE) is specified at 8. Power dissipation is rated at 246 mW, with an operating temperature range from -55°C to +150°C.
Verify the specific suffix LT1G against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Cross-reference the part number with official onsemi documentation to ensure the internal resistor values match the design requirements. Confirm availability through authorized distributors as lead times may vary based on production cycles.
Select this component when a PNP switch with integrated biasing is required in an SOT-23 package. Ensure the 4.7 kOhm base resistor value aligns with the driving source impedance and desired switching speed. Verify that the 100 mA collector current rating exceeds the maximum load current in the application circuit.
This part belongs to the MMUN213xL series of pre-biased transistors from onsemi. The series offers various resistor combinations to suit different drive conditions while maintaining a consistent physical footprint. These components are commonly used to simplify PCB layouts in portable and industrial equipment.
Compatible substitutes include other PNP digital transistors in SOT-23 packages with similar VCEO and Ic ratings. Verify equivalent internal resistor values (R1 and R2) to maintain circuit performance. Check pinout compatibility before substitution.