ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：8 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
Download product information
Overview
The MMUN2131LT1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device features a typical input resistance of 2.2 kOhms with a resistor ratio of 1. Packaged in an SOT-23 (TO-236) surface-mount format, it offers a total power dissipation of 246 mW at 25°C and functions across a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single PNP transistor with a monolithic bias network comprising two resistors to replace discrete components.
- Reduces board space and component count by eliminating the need for external biasing resistors.
- Designed to simplify circuit design through integrated functionality.
Applications
- Replacing single devices and their external resistor bias networks in electronic circuits.
- Applications requiring reduced system cost and minimized board space utilization.
- Automotive and other applications requiring unique site and control change requirements.
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Ensure compliance with RoHS standards and lead-free requirements as specified in the datasheet. Confirm that the selected variant meets any necessary automotive qualification standards if applicable to the target application environment.
Selection Notes
Select this component when a compact solution is needed to drive PNP switching loads without external biasing resistors. Consider the 50 V collector-emitter voltage rating and 100 mA current capability for load requirements. Evaluate the thermal characteristics and derating curves to ensure adequate heat dissipation within the operating temperature range for the specific PCB layout.
Part Context
This part belongs to the MUN2131L series of digital transistors manufactured by onsemi. It shares functional similarities with other BRTs in the family, such as the MUN2131T1G and MUN5131T1G, which differ primarily in packaging styles like SC-59 or SC-70/SOT-323 while maintaining comparable electrical characteristics.
Replacement Considerations
Public confirmed substitute part numbers include NSVMMUN2131LT1G.
FAQ
What is the internal resistor configuration of the MMUN2131LT1G?
The device contains a monolithic bias network consisting of a series base resistor and a base-emitter resistor, with a typical value of 2.2 kOhms for R1 and a resistor ratio of 1.
What is the maximum collector-emitter voltage for this component?
The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.
Does the MMUN2131LT1G support automotive applications?
Yes, variants with the NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
