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The MMUN2132LT1 is a PNP Bias Resistor Transistor (BRT) from onsemi, designed to replace discrete transistors and external bias networks. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device is housed in an SOT-23 package suitable for low power surface mount applications. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device dissipation (PD) of 246 mW at 25°C. The typical input resistance values are 4.7 kOhms for both R1 and R2.
Verify the specific ordering suffix when sourcing this component. The base part number MMUN2132LT1 may be available with different packaging options such as tape and reel quantities. Confirm RoHS compliance status and lead-free availability through official manufacturer documentation or authorized distributors before procurement.
Select this component for applications requiring a PNP digital transistor with equal internal bias resistors. Ensure the circuit design accommodates the 50 V collector-emitter voltage rating and 100 mA current limit. Consider the thermal characteristics and derating curves provided in the datasheet for high ambient temperature environments.
This component belongs to the MMUN21xxLT1 series of Bias Resistor Transistors manufactured by onsemi. The series includes various PNP configurations with different internal resistor ratios to suit diverse circuit requirements. All devices in this family share the same SOT-23 package and fundamental BRT architecture.
Publicly confirmed substitute part numbers for MMUN2132LT1 are not identified in the provided source material. Verify compatibility with existing designs by comparing pinout configurations, electrical ratings, and internal resistor values against potential alternatives.