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The MMUN2133LT1G is a single PNP digital transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It integrates a bipolar junction transistor with built-in biasing resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 4.7 kOhms and a typical resistor ratio of 0.1. It offers a minimum DC current gain (hFE) of 80 and a power dissipation rating of 246 mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official onsemi documentation to confirm pinout and electrical tolerances. Ensure the procurement channel provides valid RoHS compliance certificates. Cross-reference the manufacturer part number with the distributor's catalog to avoid substitution errors. Confirm that the received components match the specified SOT-23-3 package dimensions.
Select this component when a PNP configuration with integrated base and emitter resistors is required. The 4.7 kOhm input resistance suits standard logic levels. Consider the 246 mW power dissipation limit for thermal management. Verify that the -50 V voltage rating meets the circuit's maximum operating conditions. Compare hFE requirements against load specifications to ensure adequate drive capability.
This part belongs to the MMUN2133L series of pre-biased transistors from onsemi. It is designed as a drop-in replacement for discrete resistor-transistor networks. The series is characterized by low saturation voltage and consistent gain. It serves as a fundamental building block for digital logic interfacing and signal switching tasks in consumer and industrial electronics.
Check for NSVMMUN2132LT1G or similar variants within the same family. Verify if alternative manufacturers offer equivalent PNP digital transistors with matching resistor ratios. Ensure pin compatibility before substituting.