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The MMUN2134LT1 is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device power dissipation (PD) of 246 mW at 25°C. The typical input resistors are R1 = 22 kOhms and R2 = 47 kOhms, yielding a ratio of 0.47. The DC current gain (hFE) has a minimum value of 80.
Verify the specific ordering suffix for packaging requirements. The LT1 suffix indicates availability in tape and reel format with a standard quantity of 3000 units. Confirm RoHS compliance status if lead-free materials are required for the assembly process. Check the manufacturer's documentation for any updates regarding the preferred device status or marking codes.
Select this component when a PNP digital transistor with a 22 kOhm series base resistor and 47 kOhm base-emitter resistor is needed. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA continuous current rating. Consider the SOT-23 package dimensions and thermal resistance characteristics for heat dissipation planning in the final design.
This part belongs to the MMUN21xxLT1 Series of Bias Resistor Transistors. The series includes various PNP configurations with different internal resistor values, all sharing the same SOT-23 package and general electrical ratings. The MMUN2134 variant specifically provides the 22k/47k resistor combination.
Compatible substitutes within the same family include MMUN2134LT1G, which denotes a lead-free package version. Other variants in the series share the same package but differ in internal resistor ratios and current gain specifications.