MMUN2135LT1G

MMUN2135LT1G

$0.13
  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-

SKU:2c0f3494f90e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:246 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)

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MMUN2135LT1G

Overview

The MMUN2135LT1G is a PNP digital transistor from onsemi, designed as a single pre-biased unit in an SOT-23 surface-mount package. It integrates internal biasing resistors to replace discrete networks. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (Ic) of 100 mA. The device features a typical base resistor (R1) of 47 kOhms and an emitter resistor (R2) of 4.7 kOhms. DC current gain (hFE) is specified with a minimum value of 80. Power dissipation is rated at 246 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

  • Integrates dual biasing resistors within a single compact semiconductor package to simplify circuit design.
  • Provides high-density integration suitable for space-constrained surface-mount applications.
  • Offers standardized electrical characteristics for reliable switching performance in digital logic interfaces.

Applications

  • General-purpose switching in digital logic circuits
  • Driver stages for low-power loads
  • Level shifting between different voltage domains

Procurement Notes

Verify the specific suffix LT1G against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Ensure the ordering quantity aligns with standard reel sizes if bulk procurement is required. Cross-reference the part number with authorized distributors to confirm current availability and lead times before finalizing supply chain decisions.

Selection Notes

Select this component when a PNP configuration with integrated biasing is required for switching applications. The 47 kOhm base resistor value suits moderate drive currents. Verify that the 50 V voltage rating exceeds the maximum circuit potential. Consider the SOT-23 footprint constraints during PCB layout to ensure adequate thermal clearance for the 246 mW power dissipation rating.

Part Context

This part belongs to the MMUN21xx series of pre-biased transistors from onsemi. These devices are engineered to reduce board space and assembly costs by replacing multiple discrete components. The series offers various resistor combinations to accommodate different input impedance requirements while maintaining consistent transistor performance characteristics across the product line.

Replacement Considerations

Compatible substitutes include other PNP digital transistors with similar VCEO ratings and integrated biasing, such as the MMUN2133LT1G or NSVMMUN2135LT1G. Verify that alternative parts match the SOT-23-3 package dimensions and have equivalent hFE and saturation voltage specifications to ensure functional parity in existing designs.

MMUN2135LT1GMMUN2135LT1G
$0.13
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