MMUN2137LT1G

MMUN2137LT1G

$0.13
  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-

SKU:6a1368cabc8a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:246 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)

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MMUN2137LT1G

Overview

The MMUN2137LT1G is a PNP digital transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It integrates a single PNP bipolar junction transistor with built-in biasing resistors to simplify circuit design. The device supports a maximum collector-emitter voltage of -50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 80 and a typical input resistance of 4.7 kOhms. The component operates within a temperature range of -55°C to +150°C and features a power dissipation rating of 246 mW.

Feature Summary

  • Integrates a PNP transistor with internal base and emitter biasing resistors for simplified switching applications.
  • Provides high DC current gain to ensure reliable saturation and cutoff states.
  • Utilizes a compact SOT-23-3 footprint suitable for space-constrained surface-mount designs.

Applications

  • General-purpose switching circuits requiring integrated biasing.
  • Driver stages for logic interfaces and signal level translation.
  • Low-power control applications in consumer electronics.

Procurement Notes

Verify the specific suffix LT1G against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent Product Change Notifications regarding material or manufacturing site updates before finalizing procurement orders.

Selection Notes

Select this component when a PNP configuration with integrated biasing is required. Compare the 4.7 kOhm input resistance and 100 mA current capability against circuit requirements. Verify that the SOT-23-3 thermal characteristics meet the system's power dissipation needs under expected operating conditions.

Part Context

This part belongs to the MMUN2137L series of pre-biased transistors from onsemi. It shares the same functional architecture as other members in the MMUN family but is distinguished by its specific resistor values and PNP polarity. The series is designed to replace discrete resistor-transistor combinations in standard switching applications.

Replacement Considerations

Cross-reference with MMUN2132LT1G or MMUN2133LT1G if alternative biasing ratios are acceptable. Verify pinout compatibility and electrical parameter overlaps before substituting to ensure circuit functionality remains unchanged.

MMUN2137LT1GMMUN2137LT1G
$0.13
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