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The MMUN2137LT1G is a PNP digital transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It integrates a single PNP bipolar junction transistor with built-in biasing resistors to simplify circuit design. The device supports a maximum collector-emitter voltage of -50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 80 and a typical input resistance of 4.7 kOhms. The component operates within a temperature range of -55°C to +150°C and features a power dissipation rating of 246 mW.
Verify the specific suffix LT1G against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent Product Change Notifications regarding material or manufacturing site updates before finalizing procurement orders.
Select this component when a PNP configuration with integrated biasing is required. Compare the 4.7 kOhm input resistance and 100 mA current capability against circuit requirements. Verify that the SOT-23-3 thermal characteristics meet the system's power dissipation needs under expected operating conditions.
This part belongs to the MMUN2137L series of pre-biased transistors from onsemi. It shares the same functional architecture as other members in the MMUN family but is distinguished by its specific resistor values and PNP polarity. The series is designed to replace discrete resistor-transistor combinations in standard switching applications.
Cross-reference with MMUN2132LT1G or MMUN2133LT1G if alternative biasing ratios are acceptable. Verify pinout compatibility and electrical parameter overlaps before substituting to ensure circuit functionality remains unchanged.