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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2138LT1G is a single PNP pre-biased digital transistor manufactured by onsemi. It integrates a bipolar junction transistor with an internal base resistor (R1) of 2.2 kOhms within a compact SOT-23-3 surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 100 mA, with a power dissipation rating of 246 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 160 at 5 mA and 10 V, a maximum saturation voltage of 250 mV at 300 µA base current and 10 mA collector current, and a collector cutoff current of 500 nA.
Feature Summary
- Integrates a PNP BJT with a 2.2 kOhm base resistor to replace discrete components
- Designed for high-speed switching applications in low-voltage circuits
- Utilizes a compact SOT-23-3 package for efficient surface-mount assembly
Applications
- General-purpose switching in consumer electronics
- Driver circuits for logic interfaces
- Level shifting between different voltage domains
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm pinout compatibility and RoHS status. Ensure that the selected variant matches the required thermal performance and packaging format for the intended PCB layout. Cross-reference datasheet parameters with system requirements before finalizing procurement decisions.
Selection Notes
Select this component when a compact PNP solution with integrated biasing is required. The 2.2 kOhm internal resistor value determines the drive current capability; verify that the driving source can supply sufficient base current to achieve full saturation under worst-case hFE conditions. Consider the 50 V voltage rating relative to the circuit's maximum operating voltage.
Part Context
This part belongs to the MMUN21xx series of pre-biased transistors from onsemi. These devices are engineered to simplify circuit design by combining a transistor and biasing resistors into a single package. The MMUN2138LT1G specifically utilizes a 2.2 kOhm base resistor, distinguishing it from other series members like the MMUN2133 which uses a 4.7 kOhm resistor.
Replacement Considerations
Direct substitutes within the same family include MMUN2133LT1G and MMUN2139LT1G, provided the differing base resistance values align with the circuit design requirements.
