MMUN2141LT1G

$0.03

Description：TRANS PREBIAS PNP 50V SOT23-3
Series：-

SKU:9532652b1de1 Category: Single, Pre-Biased Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
Resistors Included：R1 Only
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：100 kOhms
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：246 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)

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MMUN2141LT1G

Overview

The MMUN2141LT1G is a single PNP digital transistor manufactured by onsemi, designed for surface-mount applications in the SOT-23-3 package. It integrates a bipolar junction transistor with built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistor value of 10 kOhms and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 246 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

Integrates a PNP transistor with dual internal bias resistors to reduce component count and board space.
Provides consistent switching performance through standardized resistor ratios and high current gain.
Engineered for high-density surface-mount assembly using the compact SOT-23-3 footprint.

Applications

General-purpose switching circuits requiring pre-biased PNP control.
Driver stages for logic-to-power interface translation.
Battery management systems utilizing low-voltage PNP switching.

Procurement Notes

Verify the complete part number including the suffix LT1G against official manufacturer documentation to ensure correct packaging and compliance status. Confirm that the specific revision matches the intended application requirements before finalizing procurement orders.

Selection Notes

Select this component when a PNP configuration with integrated biasing is required within a 50V limit. Ensure the 100mA current rating and 246mW power dissipation capabilities align with the thermal and load constraints of the target circuit design.

Part Context

This component belongs to the MMUN21xxL series of pre-biased transistors from onsemi. It shares the same physical package and general electrical characteristics as other members of the family, differentiated primarily by the specific values of the internal base and emitter resistors.