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Product Detailed Parameters
- Description：35@5MA,10V 200MW 100MA 50V SOT-2
- Series：-
- Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The MMUN2211 is a Bias Resistor Transistor (BRT) manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It integrates an NPN silicon epitaxial planar digital transistor with internal bias resistors, designed to replace discrete devices and external resistor networks. The component is available in surface mount packages including TO-236-3, SC-59, and SOT-23-3. Key electrical characteristics include a collector-emitter saturation voltage of 0.4V at VCC=5V, VB=2.5V, and RL=1KΩ. The device supports a maximum output current of 100mA and features a breakdown voltage of 50V.
Feature Summary
- Integrates NPN transistor with built-in bias resistors to simplify circuit design
- Designed as a direct replacement for single devices and external resistor bias networks
- Utilizes NPN silicon epitaxial planar technology for reliable performance
Applications
- Logic level shifting circuits
- Switching applications requiring simplified biasing
- Digital interface circuits replacing discrete resistor networks
Procurement Notes
Verify the manufacturer designation matches Shenzhen Slkormicro Semicon Co., Ltd. when sourcing components. Confirm the package type corresponds to TO-236-3, SC-59, or SOT-23-3 based on board layout requirements. Ensure the part number suffix aligns with specific thermal or electrical variants if applicable. Cross-reference datasheet parameters against application needs before procurement.
Selection Notes
Select the MMUN2211 when space constraints require integrating bias resistors directly with the transistor. Consider this component for designs needing reduced component count compared to discrete BJT solutions. Evaluate the 100mA current rating and 50V breakdown voltage against load requirements. Verify compatibility with logic levels driving the base terminal.
Part Context
This component belongs to the series of digital transistors designed to consolidate multiple discrete components into a single surface-mount package. The BRT architecture eliminates the need for external biasing resistors typically required for standard bipolar junction transistors. This integration reduces footprint and simplifies assembly processes in modern electronic manufacturing.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the available documentation. Verify pinout compatibility and electrical specifications carefully when considering alternative manufacturers' equivalents for this specific BRT configuration.
