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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2211LT3G is an NPN Bias Resistor Transistor (BRT) from onsemi, housed in a surface-mount SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a collector current (IC) of 100 mAdc, and a total device dissipation (PD) of 246 mW at 25°C. The typical input resistance values are R1 = 10 kOhms and R2 = 10 kOhms, yielding a resistor ratio of 1. The operating temperature range spans from -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor.
- Designed to replace discrete devices and external resistor bias networks, reducing system cost and board space.
- Housed in a low-power SOT-23 surface mount package suitable for compact applications.
Applications
- Level shifting between 12 or 24 volt circuits and logic levels
- Open collector inverter configurations for signal inversion
- Unregulated current source implementations
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The 'LT3' designation indicates a tape and reel quantity of 10,000 units. Confirm RoHS compliance status by checking the manufacturer's latest product specifications, as environmental certifications may vary by production batch.
Selection Notes
Select this component when a simplified circuit design requires an NPN digital transistor with equal base and base-emitter resistances. Ensure the application operates within the specified 50 V collector-emitter voltage limit and 100 mA continuous current rating. Verify that the SOT-23 package dimensions align with the target PCB footprint constraints.
Part Context
This part belongs to the MMUN2211LT1 Series of Bias Resistor Transistors manufactured by onsemi. The series is designed to eliminate individual biasing components by integrating them into a single device. The MMUN2211LT3 variant specifically denotes the standard non-RoHS version packaged in a 10,000-unit tape and reel format.
Replacement Considerations
MMUN2211LT3G serves as the lead-free equivalent of the MMUN2211LT3. Both variants share identical electrical characteristics and pinouts, differing only in material composition and environmental compliance.
