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The MMUN2211LT3G is an NPN Digital Transistor (BRT) from onsemi, housed in a surface-mount SOT-23-3 package. It integrates a single transistor with a monolithic bias network comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 246 mW. The typical input resistance is 10 kOhms with a resistor ratio of 1. Minimum DC current gain ranges from 35 to 60. It operates within a temperature range of -55°C to +150°C and holds AEC-Q100 qualification.
Verify the specific suffix LT3G against official datasheets to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through manufacturer documentation. Ensure the ordering part number matches the required automotive qualification level. Cross-reference the manufacturer's latest revision history for any pinout or electrical parameter updates before finalizing procurement.
Select this component when a compact NPN switch with integrated biasing is required. The 10 kOhm input resistance suits standard logic interfaces. Verify that the 50 V collector-emitter voltage rating exceeds the circuit's maximum operating voltage. Consider the 246 mW power dissipation limit for thermal management in dense PCB layouts.
This device belongs to the MMUN2211L series of Bias Resistor Transistors. It is functionally similar to other BRTs like MUN2211T1G but differs in packaging and automotive qualification. The LT3G suffix specifically denotes the SOT-23-3 surface-mount package configuration used in modern electronics assembly.
MMUN2211LT1G is a verified alternative within the same series offering identical electrical characteristics in a compatible SOT-23-3 package. Verify pin compatibility and ensure the substitute meets the same AEC-Q100 requirements if automotive use is intended.