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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2212LT1 is a single NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-23 package. It integrates a transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device power dissipation (PD) of 246 mW at 25°C. The typical DC current gain (hFE) is 60 at IC = 5.0 mA and VCE = 10 V. The internal resistors are typically 22 kOhms each, with a ratio of 1.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor to replace discrete components.
- Designed for low-power surface mount applications within the compact SOT-23 package.
- Reduces board space and component count while simplifying circuit design.
Applications
- Level shifting between 12 or 24 volt circuits and logic levels
- Open collector inverter configurations
- Unregulated current source implementations
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the requested part matches the exact manufacturer part number and revision level required for the design. Ensure all technical specifications align with the system requirements before procurement.
Selection Notes
Select this component when a single NPN BRT with 22 kOhm base and emitter resistors is required. Verify that the 50 V collector-emitter voltage and 100 mA current ratings meet the application needs. Consider the SOT-23 package size for space-constrained designs requiring integrated biasing.
Part Context
This device belongs to the MMUN22xxLT1 Series of NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. The series is designed to replace individual transistors and external resistor bias networks, offering a consolidated solution for digital switching and biasing applications.
Replacement Considerations
Direct replacements within the same series include MMUN2212LT1G (Pb-Free version). Other variants in the series offer different resistor values but share the same package and general characteristics.
FAQ
What is the configuration of the internal bias network?
The internal bias network consists of two resistors: a series base resistor and a base-emitter resistor.
What is the typical value of the base resistor (R1)?
The typical value of the base resistor (R1) is 22 kOhms.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
