MMUN2213LT1

Description：TRANS BRT NPN 100MA 50V SOT23
Series：*

SKU:011fdf931f01 Category: Single, Pre-Biased Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS BRT NPN 100MA 50V SOT23
Series：*
Mfr：onsemi
Package：Cut Tape (CT)
Resistors Included：-
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Resistor - Base (R1)：-
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
Frequency - Transition：-
Power - Max：-
Grade：-
Qualification：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-

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MMUN2213LT1

Overview

The MMUN2213LT1 is an NPN Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors. It operates within a collector-emitter voltage range of 50 Vdc and supports a continuous collector current of 100 mAdc. The device features a minimum DC current gain (hFE) of 80 at 5.0 mA and 10 V. Internal resistors R1 and R2 are typically 47 kOhms each, yielding a ratio of 1. Thermal dissipation reaches 246 mW at 25°C ambient temperature. The component is housed in a surface-mount SOT-23 package.

Feature Summary

Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components.
Reduces board space and simplifies circuit design by eliminating external biasing resistors.

Applications

Level shifting between 12 or 24 Volt circuits and logic levels
Open collector inverter configurations for signal inversion
Unregulated current source applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type and environmental compliance status. Confirm that the requested part number matches the exact electrical characteristics required for the target application before procurement.

Selection Notes

Select this component when a compact NPN switching solution with integrated base biasing is required. Ensure the 47 kOhm internal resistance values align with the driving logic interface requirements and that the 50 V collector-emitter rating exceeds the maximum circuit voltage.

Part Context

This device belongs to the MMUN2211LT1 Series of NPN Silicon Surface Mount Transistors. The series is designed to provide cost-effective alternatives to discrete transistor and resistor combinations in low power surface mount applications.