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The MMUN2213LT1G is an NPN Bias Resistor Transistor (BRT) from onsemi, housed in a SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, continuous collector current (IC) of 100 mAdc, and total device dissipation (PD) of 246 mW at 25°C. The typical input resistors R1 and R2 are both 47 kOhms, yielding a resistor ratio of 1.0. The DC current gain (hFE) has a minimum value of 80 at IC = 5.0 mA and VCE = 10 V.
Verify the specific ordering suffix 'LT1G' corresponds to the SOT-23 package and tape & reel shipping configuration as documented in the official datasheet. Confirm that the part marking 'A8C' matches the received component. Ensure compliance with RoHS and Pb-Free requirements if specified for the target application environment.
Select this component when a compact NPN switch with integrated biasing is required. The 47 kOhm internal resistors suit standard logic levels. Consider thermal derating curves for high ambient temperatures. Verify pinout compatibility with existing PCB footprints, as SOT-23 styles may vary across manufacturers.
This device belongs to the MUN2213L series of digital transistors. It shares functional characteristics with other BRTs in the DTC144E family but differs in packaging and specific resistor values. The LT1G suffix denotes the SOT-23 package variant manufactured by onsemi.
Direct substitutes within the same family include SMUN2213LT1G, which offers automotive qualification (AEC-Q101). Cross-brand equivalents with identical NPN polarity, 50V rating, and 47k/47k resistor ratios should be verified for pinout and electrical parameter alignment.