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The MMUN2214LT1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic silicon transistor with two built-in bias resistors: a series base resistor (R1) of 10 kOhms and a base-emitter resistor (R2) of 47 kOhms, resulting in a typical resistance ratio of 0.21. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It operates within a temperature range of -55°C to +150°C and is housed in an SOT-23-3 surface-mount package. The component is AEC-Q100 qualified for automotive applications.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and material declarations as stated in the datasheet. Confirm that the AEC-Q100 qualification status aligns with project requirements before finalizing procurement orders.
Select this component when a single NPN digital transistor with a 10 kOhm base resistor and 47 kOhemitter resistor is required. Compare the 50 V breakdown voltage and 100 mA current rating against load requirements. Consider the SOT-23-3 footprint constraints and thermal dissipation limits relative to alternative packages.
This part belongs to the MMUN2214L series of Bias Resistor Transistors from onsemi. It serves as a direct replacement for discrete resistor-transistor networks, offering a compact solution for driving low-power loads. The 'L' suffix typically denotes the specific internal resistor configuration within the broader MMUN family.
Equivalent parts include MUN2214T1G and DTC114YE. Verify pinout compatibility and exact resistor values (R1=10k, R2=47k) when substituting.