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The MMUN2215LT1 is an NPN silicon Bias Resistor Transistor (BRT) from the MMUN2211LT1 series, manufactured by onsemi. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and an open base-emitter connection within a surface-mount SOT-23 package. The device supports a maximum collector current of 100 mA and withstands collector-emitter voltages up to 50 Vdc. Key electrical parameters include a minimum DC current gain (hFE) of 160 at 5.0 mA and 10 V, a typical input resistance (R1) of 10 kOhms, and a total power dissipation of 246 mW at 25°C ambient temperature.
Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Confirm that the requested part number matches the exact electrical characteristics required for the application, as variations exist within the series. Ensure compatibility with standard surface mount assembly processes.
Select this component when a fixed 10 kOhm base resistor is appropriate for the driving logic interface. Verify that the 100 mA continuous collector current rating meets the load requirements. Consider the thermal resistance values if operating in high ambient temperatures or enclosed spaces to ensure junction temperatures remain within safe limits.
This component belongs to the MMUN2211LT1 series of digital transistors produced by onsemi. The series offers various combinations of internal resistors to suit different logic drive requirements while maintaining the same physical footprint and general electrical ratings.
Direct substitutes within the same series include MMUN2215LT1G, which denotes Pb-free packaging. Other variants like MMUN2211LT1 or MMUN2213LT1 share the package but differ in internal resistor values and current gain specifications.