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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：400 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2215LT1G is a single NPN digital transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It integrates a BJT with built-in bias resistors to simplify circuit design. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device features a typical base resistor (R1) of 47 kOhms and an emitter resistor (R2) of 47 kOhms, resulting in a resistor ratio of 1. It offers a minimum DC current gain (hFE) of 80 at 5 mA and 10 V. Power dissipation is rated at 246 mW, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Integrates a single NPN bipolar junction transistor with dual built-in bias resistors for simplified switching applications.
- Provides high current gain capability suitable for driving loads directly from logic outputs.
- Designed for surface-mount assembly in compact SOT-23-3 packages.
Applications
- General-purpose switching circuits
- Logic level translation interfaces
- Driver stages for relays or small motors
Procurement Notes
Verify the specific ordering suffix LT1G to confirm the reel packaging format and lead-free compliance status. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability. Check for AEC-Q101 qualification if automotive grade reliability is required for the target application environment.
Selection Notes
Select this component when a single NPN switch with a 1:1 bias resistor ratio is needed. Compare against similar models like MMUN2213LT1G or MMUN2212LT1G if different resistance values are required. Confirm that the 50 V voltage rating and 100 mA current capacity meet the load requirements of the specific circuit design.
Part Context
This part belongs to the MMUN221xL series of pre-biased transistors from onsemi. These devices are designed to replace discrete resistor networks and individual transistors, reducing board space and assembly costs. The series includes various resistor combinations tailored for different logic families and drive requirements.
Replacement Considerations
Direct substitutes within the same family include MMUN2213LT1G and MMUN2212LT1G, provided their respective resistor values match the circuit design needs. Verify pinout compatibility and thermal characteristics before swapping components in existing layouts.
