MMUN2216LT1G

Overview

The MMUN2216LT1G is a Bias Resistor Transistor (BRT) featuring an NPN silicon transistor with a monolithic bias resistor network. It integrates a series base resistor and a base-emitter resistor to replace discrete components, reducing board space and system cost. The device operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. Electrical characteristics include a typical DC current gain of 350 at IC = 5.0 mA and VCE = 10 V, and an input resistor R1 of 4.7 kOhms. Thermal dissipation is rated at 246 mW at 25°C in the SOT-23 package.

Feature Summary

• Integrates a single NPN transistor with a monolithic bias network consisting of two resistors to simplify circuit design.
• Reduces component count and board space by replacing individual biasing components with a single surface-mount device.
• Compliant with RoHS standards and free from lead, halogens, and brominated flame retardants.

Applications

• General-purpose switching applications requiring simplified bias networks.
• Driver circuits for logic outputs where space-saving integration is required.
• Automotive and industrial applications utilizing devices with unique site control requirements.

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm that the requested part matches the exact marking code 'A8F' for the SOT-23 variant. Ensure compliance with environmental specifications such as Pb-free and RoHS status if required for the target assembly process.

Selection Notes

Select this component when a compact NPN digital transistor solution is needed with integrated biasing. Verify that the 50 V collector-emitter voltage and 100 mA continuous current ratings meet the application's electrical demands. Consider the thermal derating curves provided in the datasheet to ensure adequate heat dissipation within the operating temperature range.

Part Context

This component belongs to the MUN2216L series of digital transistors manufactured by onsemi. It is designed to function as a direct replacement for discrete transistor and resistor combinations. The product line includes various packages, with the LT1G suffix specifically denoting the SOT-23 surface-mount configuration.

Replacement Considerations

Direct replacements within the same family include SMUN2216LT1G. Other variants in the DTC143T series may serve as functional equivalents depending on the required package style and pinout compatibility.

FAQ

What is the internal resistor configuration of the MMUN2216LT1G?

The device contains a monolithic bias network with a series base resistor (R1) of 4.7 kOhms and a base-emitter resistor (R2).

What is the minimum DC current gain specified for this device?

The minimum DC current gain (hFE) is 160, measured at a collector current of 5.0 mA and a collector-emitter voltage of 10 V.

Is this component qualified for automotive applications?

Yes, devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.