MMUN2217LT1G

Overview

The MMUN2217LT1G is a single NPN digital transistor (BRT) manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It integrates a built-in bias resistor network with a typical base resistance of 47 kOhms and a typical emitter resistance of 47 kOhms, resulting in a 1:1 ratio. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 246 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrates dual resistors for simplified circuit design
• Single NPN configuration in compact SMD package

Applications

• General-purpose switching applications
• Driver circuits for logic interfaces
• Level shifting between different voltage domains

Procurement Notes

Verify the specific part number suffix against official manufacturer documentation to confirm pinout compatibility and electrical tolerances. Ensure that the sourcing channel provides valid traceability data for quality assurance purposes before finalizing procurement decisions.

Selection Notes

Select this component when a pre-biased NPN solution is required with a 47 kOhm input impedance. Compare the 50V rating and 100mA current capacity against load requirements to ensure adequate headroom for the intended application environment.

Part Context

This component belongs to the MMUN2211L series of digital transistors. It shares the same physical footprint and general electrical characteristics as other members of the family, differentiated primarily by the internal resistor values integrated into the bias network.

Replacement Considerations

Compatible substitutes include the MMUN2213LT1G and MUN2213T1G, which offer similar NPN configurations within the same package type but may feature different internal resistance values.