MMUN2218LT1G

Overview

The MMUN2218LT1G is a single NPN digital transistor from onsemi, housed in an SOT-23-3 surface-mount package. It integrates a built-in bias resistor network (BRT) with a typical input resistance of 47 kOhms and a typical resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 80 and a power dissipation rating of 246 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates a single NPN transistor with a built-in bias resistor network to simplify circuit design.

Applications

• General-purpose switching applications
• Driver circuits for logic interfaces

Procurement Notes

Verify the specific part number against official manufacturer documentation to ensure accuracy. Confirm that the component meets required environmental standards such as RoHS compliance before integration into final designs.

Selection Notes

Select this component when a single NPN configuration with a 47 kOhm base resistor is required. Ensure the 50 V voltage rating and 100 mA current capacity align with the target application's operational limits.

Part Context

This component belongs to the MMUN22xxL series of digital transistors manufactured by onsemi. It shares the SOT-23-3 form factor with other variants in the family, differing primarily in internal resistor values and transistor polarity specifications.

Replacement Considerations

Compatible substitutes include MMUN2218T1G and MMUN2218LT3G, which maintain identical electrical characteristics and pinout configurations within the same product family.