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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2230LT1 is an NPN Bias Resistor Transistor (BRT) from onsemi, housed in a surface-mount SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device power dissipation (PD) of 246 mW at 25°C. The typical input resistance (R1) is 1.0 kOhm with a resistor ratio (R1/R2) of 0.8. The DC current gain (hFE) ranges from 3.0 to 5.0, and the collector-emitter saturation voltage (VCE(sat)) is typically 0.25 V.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor.
- Designed to replace discrete devices and external resistor bias networks, reducing board space and component count.
- Housed in a low-power SOT-23 surface mount package suitable for compact circuit designs.
Applications
- Level shifting between 12 or 24 volt circuits and logic levels
- Open collector inverter configurations for signal inversion
- Unregulated current source applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the requested part number matches the exact pinout and electrical characteristics required for the target application. Ensure compatibility with RoHS standards if applicable to the manufacturing process.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. The 1.0 kOhm input resistance and specific hFE range make it suitable for driving loads from standard logic outputs. Verify thermal requirements against the 246 mW dissipation limit at ambient temperatures above 25°C.
Part Context
This device belongs to the MMUN22xxLT1 series of digital transistors manufactured by onsemi. The series is designed to simplify circuit design by combining transistor and resistor functions into a single surface-mount component. The MMUN2230LT1 variant specifically features a 1.0 kOhm input resistance configuration within the SOT-23 footprint.
Replacement Considerations
Direct substitutes within the same series include MMUN2230LT1G, which denotes a lead-free package version. Other variants in the MMUN22xxLT1 family may serve as functional alternatives if their specific resistor values and current gains align with the circuit requirements.
