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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2230LT1G is an NPN Bias Resistor Transistor (BRT) from onsemi, designed to replace a single transistor and its external bias network. It integrates a monolithic bias network consisting of a series base resistor (R1 = 1 kΩ) and a base-emitter resistor (R2 = 1 kΩ). The device operates with a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. It features a DC current gain (hFE) of 3.0 to 5.0 at IC = 5.0 mA and VCE = 10 V. Packaged in SOT-23 (CASE 318), it supports surface mount installation with a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates a monolithic bias network with two resistors into a single device to eliminate external components.
- Simplifies circuit design by reducing board space and component count.
- Available with S and NSV prefixes for automotive applications requiring AEC-Q101 qualification and PPAP capability.
Applications
- Replacing discrete transistors and external resistor networks in switching circuits.
- Automotive electronics requiring unique site and control change requirements.
- General-purpose digital switching applications.
Procurement Notes
Verify the specific ordering suffix and prefix against the manufacturer's official documentation to ensure correct package type and qualification level. Confirm that the selected variant meets the required environmental standards and application-specific constraints before finalizing procurement decisions.
Selection Notes
Select this component when a compact solution is needed to drive a load with a simple logic interface. Ensure the required input resistance matches the 1 kΩ configuration provided by R1. Verify that the 50 V collector-emitter voltage rating is sufficient for the target circuit's supply voltage and transient conditions.
Part Context
This part belongs to the MUN2230 family of digital transistors, which includes variants like MMUN2230L and MUN2230T1G. These devices share the same internal circuit topology but differ in packaging and shipping configurations. The MMUN2230LT1G specifically utilizes the SOT-23 package format.
Replacement Considerations
Direct substitutes include other BRTs with identical 1 kΩ/1 kΩ resistor ratios and NPN polarity, such as the DTC113E series or equivalent parts from other manufacturers offering the same electrical characteristics and pinout compatibility.
