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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：8 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2231LT1 is an NPN Bias Resistor Transistor (BRT) from onsemi, housed in a surface-mount SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device power dissipation (PD) of 246 mW at 25°C. The typical input resistance (R1) is 2.2 kOhms, with a resistor ratio (R1/R2) of 1. The DC current gain (hFE) ranges from 8 to 15. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor.
- Designed to replace discrete devices and external resistor bias networks, reducing board space and component count.
- Housed in the SOT-23 package suitable for low-power surface mount applications.
Applications
- Level shifting between 12 or 24 volt circuits and logic levels
- Open collector inverter configurations
- Unregulated current source implementations
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the requested part number matches the exact electrical characteristics required for the design. Check for any recent product change notices that may affect pinout or performance specifications before finalizing procurement.
Selection Notes
Select this component when a compact solution is needed to drive a load from a logic output without external biasing resistors. Ensure the application voltage does not exceed the 50 V collector-emitter rating. Verify that the required current gain falls within the specified range of 8 to 15 for the intended switching speed and saturation requirements.
Part Context
This device belongs to the MMUN22xxLT1 series of digital transistors manufactured by onsemi. The series provides various resistor combinations to suit different logic families and drive requirements. All devices in this family share the same SOT-23 footprint and basic NPN transistor structure, differing primarily in the integrated resistor values.
Replacement Considerations
NSVMMUN2231LT1G
FAQ
What is the function of the internal resistors in the MMUN2231LT1?
The internal resistors form a bias network consisting of a series base resistor and a base-emitter resistor, eliminating the need for external components.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
How does the MMUN2231LT1 simplify circuit design?
It simplifies design by integrating the transistor and bias resistors into a single surface-mount package, reducing board space and assembly steps.
