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The MMUN2231LT1G is a single NPN digital transistor (BRT) manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It integrates a built-in bias resistor network with a typical input resistance of 2.2 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 246 mW. The component operates within a temperature range of -55°C to +150°C and features a minimum DC current gain (hFE) of 8 or 15.
Verify the specific ordering suffix LT1G against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives as indicated in manufacturer datasheets. Cross-reference part numbers with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a single NPN switch with integrated base biasing is required. The 2.2 kOhm input resistance suits standard logic outputs. Compare power dissipation ratings of 246 mW against thermal constraints. Verify that the 50 V voltage rating exceeds the maximum circuit operating voltage to ensure reliability under transient conditions.
This part belongs to the MMUN2231L series of digital transistors. It shares functional similarities with other BRTs but differs in specific resistor values and packaging. Related variants include MUN2231T1G in SC-59 packages and NSVMMUN2231LT1G with potentially different power ratings. The series provides standardized solutions for embedded logic interfacing.
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official cross-reference guides or manufacturer substitution lists for verified alternatives. Direct pin-compatible replacements may exist within the same product family but require validation of electrical parameters.