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Product Detailed Parameters
- Description：TRANS BRT NPN 100MA 50V SOT23
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT)
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The MMUN2232LT1 is an NPN Bias Resistor Transistor (BRT) from the MMUN22xxLTx series by onsemi. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor within a SOT-23 package. Key electrical parameters include a collector-base voltage (VCBO) of 50 Vdc, a collector-emitter voltage (VCEO) of 50 Vdc, and a continuous collector current (IC) of 100 mAdc. The device features a typical input resistance (R1) of 4.7 kOhms and a typical resistor ratio (R1/R2) of 1. Thermal characteristics specify a total device dissipation (PD) of 246 mW at 25°C on FR-4 minimum pad, with a junction-to-ambient thermal resistance (RθJA) of 508 °C/W.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components.
- Designed for low power surface mount applications in compact SOT-23 packages.
- Simplifies circuit design by eliminating external bias resistors.
Applications
- Level shifting between 12 or 24 volt circuits and logic levels
- Open collector inverter configurations
- Unregulated current source implementations
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging type and compliance status. Confirm that the requested part number matches the exact electrical specifications required for the application. Check for any recent product change notices or obsolescence announcements from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when a compact solution is needed to replace a discrete transistor and its associated biasing resistors. Ensure the 50 V voltage rating and 100 mA current capacity meet the circuit requirements. Verify that the integrated 4.7 kOhm input resistance provides appropriate drive characteristics for the control signal source.
Part Context
This device belongs to the MMUN22xxLTx series of digital transistors manufactured by onsemi. The series is designed to reduce system cost and board space by integrating bias networks directly onto the silicon die. These devices are commonly used in consumer electronics and industrial equipment where space constraints and assembly efficiency are critical design factors.
Replacement Considerations
Direct replacements within the same series include MMUN2232LT1G. Other variants in the MMUN22xxLTx family may be considered if different resistor ratios or gain characteristics are acceptable for the specific application requirements.
