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The MMUN2233LT1 is an NPN Bias Resistor Transistor (BRT) from onsemi, housed in a surface-mount SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1 = 4.7 kΩ) and a base-emitter resistor (R2 = 47 kΩ). The device supports a maximum collector current of 100 mA and withstands up to 50 Vdc across the collector-base and collector-emitter terminals. Thermal dissipation reaches 246 mW at 25°C ambient temperature, with an operating junction temperature range spanning from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging type and compliance status. Confirm that the requested variant matches the required Pb-Free designation if environmental regulations apply. Cross-reference the manufacturer part number with distributor catalogs to ensure accurate identification before procurement.
Select this component when a simplified biasing solution is required for NPN switching applications. Ensure the integrated resistor values align with the target input voltage and drive current requirements. Verify that the SOT-23 package dimensions fit within the available footprint constraints of the design.
This device belongs to the MMUN22xxLT1 series of digital transistors manufactured by onsemi. The series is designed to eliminate external bias resistors, offering a consolidated solution for driving loads from logic outputs. The MMUN2233LT1 specifically utilizes a 4.7 kΩ base resistor and a 47 kΩ emitter resistor configuration.
Direct substitutes include other BRTs with matching NPN polarity, similar voltage ratings, and comparable internal resistor ratios. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers.