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The MMUN2234LT1 is an NPN Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates within a collector-emitter voltage range of up to 50 Vdc and supports a continuous collector current of 100 mAdc. The device features a typical DC current gain (hFE) of 80 at 5.0 mA and 10 V. Electrical characteristics include a maximum collector-emitter saturation voltage of 0.25 Vdc under specified conditions. Thermal performance allows for a total device dissipation of 246 mW at 25°C ambient temperature. The component is housed in a surface-mount SOT-23 package.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the part number matches the required electrical specifications for the intended application before procurement.
Select this component when a compact NPN switching solution with integrated biasing is required. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity meet the circuit requirements. Consider the SOT-23 package dimensions for PCB layout constraints. Validate the internal resistor values against the specific input drive conditions of the application.
The MMUN2234LT1 belongs to the MMUN22xxLT1 Series of Bias Resistor Transistors manufactured by onsemi. This series is designed to replace individual transistors and external resistor networks. The device integrates a single NPN silicon transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor, consolidating multiple components into a single surface-mount package.
MMUN2234LT1G