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The MMUN2234LT1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor with an NPN transistor. The device features a typical input resistance of 22 kOhms and a typical resistor ratio of 0.47. Key electrical ratings include a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and power dissipation of 400 mW. The minimum DC current gain (hFE) is 80. It operates within a temperature range of -55°C to +150°C and is housed in an SOT-23-3 package.
Verify the specific suffix LT1G against official datasheets to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and halogen-free certification requirements prior to procurement. Check for automotive qualification markings if AEC-Q101 standards are required for the target application environment.
Select this component when a compact NPN switch requires integrated biasing. Ensure the 22 kOhm input resistance matches the driving source impedance. Verify that the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage. Confirm that the SOT-23-3 package fits the available footprint constraints.
This part belongs to the MMUN2234L series of digital transistors. The series is designed to simplify designs by combining a transistor and bias resistors into one package. Variants within the series differ primarily in resistor values and packaging options, such as SOT-23 or SC-59.
Direct substitutes include MUN2234T1G and MMUN2234L. Verify pinout compatibility and electrical parameter alignment before substitution.