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The MMUN2235LT1G is a single NPN digital transistor (BRT) from onsemi, housed in an SOT-23-3 surface-mount package. It integrates a built-in bias resistor network with a typical input resistance of 2.2 kOhms and a resistor ratio of 0.047. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It features a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, with a power dissipation rating of 246 mW. Operating temperatures range from -55°C to +150°C. The component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix against official datasheets to confirm package type and tape-and-reel specifications. Ensure the procurement channel provides valid traceability documentation for AEC-Q101 qualified components intended for automotive use. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current production status and avoid obsolete stock.
Select this component when a compact NPN switch with integrated biasing is required for 50 V applications. The 2.2 kOhm input resistance suits direct interfacing with standard logic outputs. Consider the 246 mW power dissipation limit for thermal management in dense PCB layouts. Verify that the SOT-23-3 footprint aligns with the target board design constraints.
This part belongs to the MMUN2235L series of pre-biased transistors. It shares the same electrical characteristics as the MUN2235T1G but utilizes a different packaging format. The series is designed to replace discrete resistor-transistor combinations, reducing component count and assembly time in digital switching applications.
The NSVMMUN2235LT1G is a verified equivalent part number offering identical electrical specifications and pinout compatibility. Both parts share the same NPN polarity, 50 V rating, and 2.2 kOhm input resistance within the SOT-23-3 package.