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The MMUN2236LT1G is a single NPN digital transistor manufactured by onsemi, designed for surface-mount applications in the SOT-23-3 package. It integrates a built-in bias resistor network with a typical input resistance of 100 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 80 and a power dissipation rating of 246 mW. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive reliability.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific part number matches the required AEC-Q101 qualification status for intended automotive applications. Ensure packaging details align with production requirements, as availability may vary between reel, cut tape, and other standard formats.
Select this component when a single NPN digital transistor with high input impedance is required. The 100 kOhm base resistor makes it suitable for interfacing with microcontrollers or logic gates where minimal drive current is available. Verify that the 50 V breakdown voltage and 100 mA current capacity meet the specific load requirements of the target application circuit.
This component belongs to the MMUN2236L series of pre-biased transistors from onsemi. It is functionally related to other models in the family, such as the MUN2236T1G, though package variations like SOT-23-3 distinguish it from SC-59 equivalents. The series provides integrated solutions for switching and amplification tasks in compact form factors.
The MUN2236T1G serves as a functional alternative within the same product family, offering similar electrical specifications but housed in an SC-59 package instead of SOT-23-3. Designers must verify pinout compatibility and physical footprint differences before substitution.