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The MMUN2238LT1G is an NPN digital transistor manufactured by onsemi, housed in a SOT-23-3 surface-mount package. It integrates a single BJT with a monolithic bias resistor network consisting of a base resistor (R1) and a base-emitter resistor (R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 246 mW. The typical input resistance R1 is 2.2 kOhms with a resistor ratio of 1. DC current gain (hFE) is specified as 160 at 5 mA and 10 V, while the saturation voltage (VCEsat) is 250 mV at 1 mA base and 10 mA collector currents.
Verify the specific ordering suffix and manufacturer documentation when sourcing this component. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications. Check for any product change notices or material declarations relevant to the manufacturing date code. Ensure the supplier provides valid traceability data for quality assurance purposes.
Select this component for designs requiring a compact NPN switch with integrated biasing. Verify that the 50 V collector-emitter voltage and 100 mA current ratings meet the load requirements. Consider the 2.2 kOhm base resistance value for drive compatibility. Ensure the SOT-23-3 package fits the available PCB footprint and thermal constraints.
This part belongs to the MUN2238 series of digital transistors from onsemi. It is functionally similar to other BRT devices like the DTC123T but offers specific resistance values and packaging. The LT1G suffix indicates the lead-free and halogen-free compliant version in the SOT-23 package.
Publicly confirmed substitute part numbers are not provided in the verified source material. Consult official distributor databases for cross-reference lists based on identical pinout and electrical specifications.