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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2240LT1G is a digital transistor with an NPN configuration, integrating a single NPN bipolar junction transistor and two bias resistors into a compact surface-mount package. This device features a base resistor of 47 kΩ and an emitter resistor of 47 kΩ, providing built-in biasing to simplify circuit design. It operates with a maximum collector-emitter voltage of 50 V and a collector current of 100 mA. The component is housed in an SOT-323 (SC-70) three-terminal leadless package, designed for high-density PCB layouts. It functions as a ready-to-use switching element, eliminating the need for external discrete resistors typically required in standard BJT applications.
Feature Summary
- Integrated dual bias resistors eliminate external components
- Compact SOT-323 surface-mount package for space-constrained designs
- Single NPN transistor configuration for simplified switching
Applications
- Switching applications in portable consumer electronics
- Level shifting circuits in communication devices
- Driver stages for low-power logic interfaces
Procurement Notes
Verify the complete part number including the suffix LT1G against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and specific binning requirements directly with authorized distributors or onsemi sales representatives prior to ordering.
Selection Notes
Select this component when a compact NPN digital transistor with fixed 47k/47k biasing is required. Ensure the application voltage does not exceed 50V and current remains within 100mA limits. Verify thermal dissipation capabilities within the SOT-323 package constraints for the intended duty cycle.
Part Context
This part belongs to onsemi's UNxNxx series of digital transistors, which integrate bias resistors with NPN junctions. The LT1G suffix indicates specific taping and reel dimensions for automated assembly. It serves as a direct replacement for discrete resistor-transistor networks in similar form factors.
Replacement Considerations
- MMUN2240LT3G
- MMBT2222ALT1G
FAQ
What are the internal resistor values?
The MMUN2240LT1G contains a base resistor of 47 kΩ and an emitter resistor of 47 kΩ.
What is the maximum collector-emitter voltage?
The maximum rated collector-emitter voltage (VCEO) is 50 V.
Which package type is used?
It utilizes the SOT-323 (also known as SC-70) leadless surface-mount package.
