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The MMVL105GT1G is a dual Schottky barrier diode manufactured by onsemi, housed in an SOT-23 surface-mount package. It features two independent internal diodes configured with a common cathode arrangement. The device is rated for a maximum repetitive peak reverse voltage of 50V and supports a continuous forward current of 200mA per diode. Key electrical characteristics include a low forward voltage drop of approximately 480mV at 100mA and a maximum reverse leakage current of 25µA at the rated voltage. The component operates within a temperature range of -55°C to +150°C and utilizes a tin (Sn) lead-free terminal finish compliant with RoHS standards.
Verify the specific ordering suffix to confirm the tape and reel quantity and packaging format required for automated assembly processes. Confirm that the RoHS compliance status matches the environmental regulations applicable to the target market. Ensure the manufacturing date code aligns with shelf-life requirements before soldering. Cross-reference the manufacturer part number against authorized distributor catalogs to avoid counterfeit components during sourcing.
Select this component when a dual Schottky diode with a common cathode topology is required in a minimal footprint. Compare the forward voltage specifications against alternative packages to ensure compatibility with low-voltage logic levels. Evaluate the maximum reverse voltage rating to guarantee sufficient headroom for the specific application's peak inverse voltage. Consider the thermal dissipation capabilities relative to the expected continuous forward current load.