MMVL109T1G

Description：DIODE TUNING 30V SOD-323
Series：-

SKU:6b6594e1a0a4 Category: Variable Capacitance (Varicaps, Varactors) Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：DIODE TUNING 30V SOD-323
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Capacitance @ Vr, F：32pF @ 3V, 1MHz
Capacitance Ratio：6.5
Capacitance Ratio Condition：C3/C25
Voltage - Peak Reverse (Max)：30 V
Diode Type：Single
Q @ Vr, F：200 @ 3V, 50MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-76, SOD-323
Supplier Device Package：SOD-323

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MMVL109T1G

Overview

The MMVL109T1G is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in a surface-mount SOT-23 package. The device features a gate-source breakdown voltage of -25 V and a gate-source cutoff voltage of -6 V. At zero gate-source voltage, the drain-source current ranges from 1 mA to 5 mA. The component has a maximum power dissipation of 310 mW and operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Single N-channel JFET configuration for discrete switching applications
Surface-mount SOT-23 packaging for automated assembly
Silicon-based construction for stable performance

Applications

Analog signal switching circuits
Low-noise preamplifier stages
Impedance matching networks

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure that the requested part number matches the exact electrical characteristics required for the design, as variations may exist within the product family. Cross-reference with the latest datasheet to confirm compliance with current environmental standards.

Selection Notes

Select this component when a small-form-factor N-channel JFET is required for low-current analog switching. The SOT-23 package suits space-constrained designs. Evaluate the 1 mA to 5 mA drain current range against circuit requirements. Confirm that the -25 V gate-source breakdown voltage provides sufficient margin for the intended operating conditions.

Part Context

This component belongs to the MMVL series of small-signal JFETs produced by onsemi. These devices are designed for general-purpose analog applications requiring low noise and high input impedance. The MMVL109T1G variant specifically offers standardized electrical parameters suitable for common switching and amplification tasks in consumer and industrial electronics.