MNS2N3810UP/TR

Overview

The MNS2N3810UP/TR is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a silicon construction and is housed in a square surface-mount package. The device is configured as a dual PNP transistor, suitable for through-hole or surface-mount applications depending on the specific variant interpretation, though listed here with SMT packaging details in related family data. Key electrical ratings include a maximum DC collector current of 50 mA and a collector-emitter voltage (VCEO) of 60 V. The power dissipation capability is rated at 350 mW. The component operates within a temperature range from -65°C to +200°C. It belongs to the 2N3810 series and is supplied in tape and reel packaging.

Feature Summary

• Dual configuration integrating two PNP transistors in a single package
• High-temperature operation capability up to 200°C
• Surface-mount form factor for automated assembly

Applications

• General-purpose switching circuits
• Amplifier stages requiring dual PNP topology
• Military or aerospace electronic systems due to high-temp rating

Procurement Notes

Verify the exact package type and pinout against the official Microchip datasheet before integration, as suffixes can indicate variations in lead finish or specific military screening levels. Confirm availability status directly with authorized distributors, as production cycles may vary. Ensure the ordering part number matches the required environmental compliance and testing standards for your specific application.

Selection Notes

Select this component when a dual PNP BJT configuration is required in a compact surface-mount footprint. Consider the 60V VCEO and 50mA Ic limits to ensure adequate headroom for your circuit design. The wide operating temperature range makes it suitable for harsh environments where standard commercial grade devices might fail. Verify that the thermal management strategy supports the 350mW power dissipation rating under worst-case conditions.

Part Context

This part is part of the broader 2N3810 family of dual small-signal BJTs produced by Microchip. It shares core electrical characteristics with other variants like the JANS2N3810U/TR but differs in packaging and potentially qualification levels. The MNS prefix typically denotes a specific military or space-grade screening level offered by Microchip/Microsemi for ruggedized applications.

Replacement Considerations

Direct replacements include other 2N3810 variants such as JANTX2N3810U or standard commercial equivalents if military screening is not required. Ensure any substitute maintains the dual PNP configuration and meets the 60V/50mA specifications. Verify package compatibility for surface-mount mounting.