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The MNS2N3810UP is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes silicon technology and features a PNP configuration housed in a surface-mount SQ package. The device is designed for through-hole or surface-mount applications with a maximum DC collector current of 50 mA. Key electrical ratings include a collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 350 mW, with an operating temperature range from -65°C to +200°C.
Verify the specific suffix UP against official Microchip documentation to confirm the exact package type and tape-and-reel specifications. Ensure that the ordering information matches the required surface-mount variant rather than the standard through-hole TO-78 version. Confirm RoHS compliance status directly with the manufacturer as regulatory markings may vary by production batch.
Select this component when a dual PNP BJT is required in a surface-mount form factor. Compare the 50 mA current rating and 60 V voltage limits against circuit requirements. Consider the 350 mW power dissipation limit and thermal management needs for high-temperature environments exceeding standard commercial ranges.
This part belongs to the 2N3810 series of dual small-signal transistors. While the standard 2N3810 typically uses a TO-78-6 through-hole package, the MNS2N3810UP designation indicates a surface-mount SQ variant. Both share similar electrical characteristics but differ significantly in physical mounting and footprint dimensions.
Direct substitutes must match the dual PNP configuration and surface-mount SQ package. Verify equivalent voltage and current ratings. Standard through-hole equivalents like the base 2N3810 require PCB layout modifications.