MNS2N3810UP

MNS2N3810UP

$39.19
  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-

SKU:0405383a7ae2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1mA, 5V
  • Power - Max:350mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:Military
  • Qualification:MIL-PRF-19500/336

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MNS2N3810UP

Overview

The MNS2N3810UP is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes silicon technology and features a PNP configuration housed in a surface-mount SQ package. The device is designed for through-hole or surface-mount applications with a maximum DC collector current of 50 mA. Key electrical ratings include a collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 350 mW, with an operating temperature range from -65°C to +200°C.

Feature Summary

  • Dual PNP configuration within a single compact package
  • High-temperature operation capability up to 200°C
  • Silicon-based construction for reliable switching performance

Applications

  • General-purpose signal switching circuits
  • Low-power amplification stages
  • Digital logic interface buffers

Procurement Notes

Verify the specific suffix UP against official Microchip documentation to confirm the exact package type and tape-and-reel specifications. Ensure that the ordering information matches the required surface-mount variant rather than the standard through-hole TO-78 version. Confirm RoHS compliance status directly with the manufacturer as regulatory markings may vary by production batch.

Selection Notes

Select this component when a dual PNP BJT is required in a surface-mount form factor. Compare the 50 mA current rating and 60 V voltage limits against circuit requirements. Consider the 350 mW power dissipation limit and thermal management needs for high-temperature environments exceeding standard commercial ranges.

Part Context

This part belongs to the 2N3810 series of dual small-signal transistors. While the standard 2N3810 typically uses a TO-78-6 through-hole package, the MNS2N3810UP designation indicates a surface-mount SQ variant. Both share similar electrical characteristics but differ significantly in physical mounting and footprint dimensions.

Replacement Considerations

Direct substitutes must match the dual PNP configuration and surface-mount SQ package. Verify equivalent voltage and current ratings. Standard through-hole equivalents like the base 2N3810 require PCB layout modifications.

MNS2N3810UPMNS2N3810UP
$39.19
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