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MOC205R2VM is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists onsemi. Its product description is OPTOISO 2.5KV TRANS W/BASE 8SOIC. Review the specifications below when checking this part for your BOM.
The MOC205R2VM is a single-channel transistor output optocoupler manufactured by onsemi, housed in an 8-SOIC surface-mount package. It features an NPN phototransistor with a base terminal for enhanced switching control. The device provides 2500Vrms isolation voltage and supports a maximum forward current of 60 mA. Key electrical parameters include a collector-emitter saturation voltage of 400 mV max, a collector current of 150 mA, and a collector-emitter voltage of 30 V. The current transfer ratio ranges from 40% to 80% at 10 mA input. Switching characteristics include a rise time of 3.2 µs and a fall time of 4.7 µs. It operates within a temperature range of -40°C to 100°C.
Verify the specific suffix R2VM against the manufacturer's datasheet to confirm the tape-and-reel packaging configuration and RoHS compliance status. Ensure the ordering part number matches the required moisture sensitivity level (MSL 1) and lead-free specifications before finalizing procurement orders.
Select this component when base-driven phototransistor performance is required for faster switching applications. The 8-SOIC package suits space-constrained surface-mount designs. Verify that the 30 V collector-emitter voltage and 150 mA collector current meet the load requirements of the target application circuit.
This device belongs to the MOC205 family of transistor output optocouplers. It shares functional similarities with other members like the MOC205M but differs in packaging and specific electrical tolerances defined by the R2VM suffix. It serves as a bridge for galvanic isolation in low-power digital logic systems.
Check for direct substitutes such as MOC205M or MOC211M if pin compatibility and electrical ratings align. Verify that any replacement maintains the 8-SOIC footprint and base-driven transistor architecture to ensure circuit functionality without redesign.
The base pin allows for external connection to improve switching speed and provide additional control over the phototransistor's state, enhancing performance in high-speed digital isolation applications.
The device exhibits a typical rise time of 3.2 µs and a fall time of 4.7 µs, resulting in a total turn-on/turn-off time suitable for moderate-speed data transmission.
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