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Product Detailed Parameters
- Description：TRANS NPN/PNP 50V 3A MPT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：3A
- Voltage - Collector Emitter Breakdown (Max)：50V
- Vce Saturation (Max) @ Ib, Ic：350mV @ 50mA, 1A / 400mV @ 50mA, 1A
- Current - Collector Cutoff (Max)：1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 50mA, 3V
- Power - Max：2W
- Frequency - Transition：320MHz, 300MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：MPT6
- Grade：-
- Qualification：-
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Overview
The MP6Z13TR is a dual NPN/PNP silicon epitaxial planar transistor from ROHM Semiconductor, housed in an MPT6 surface-mount package. It provides ±50V collector-emitter voltage and ±3A DC collector current capability. The device features low saturation voltages of 350mV (NPN) and 400mV (PNP) at 1A/50mA drive conditions. Transition frequencies reach 320MHz for the NPN element and 300MHz for the PNP element. Total power dissipation is rated at 2.0W with a maximum junction temperature of 150°C.
Feature Summary
- Low saturation voltage design for efficient switching performance
- High-speed switching characteristics suitable for frequency applications
- Dual configuration integrating complementary NPN and PNP elements
Applications
- Low frequency amplifier circuits
- Driver stages for load control
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches manufacturing date codes. Ensure storage conditions remain within specified limits to prevent degradation. Validate packaging integrity prior to assembly processes.
Selection Notes
Evaluate thermal management requirements against the 2.0W total power dissipation limit. Consider the specific transition frequency needs when selecting between the NPN or PNP element configurations. Verify base drive currents align with the specified saturation voltage test conditions.
Part Context
This component belongs to ROHM's Medium Power Transistor series designed for general-purpose switching and amplification tasks. The MPT6 package allows for compact surface-mount integration while maintaining adequate thermal performance for moderate power levels.
Replacement Considerations
Direct pin-compatible substitutes are not explicitly listed in the provided documentation. Evaluate alternative dual transistors with matching ±50V ratings and comparable saturation voltage specifications.
FAQ
What is the maximum pulsed collector current rating?
The MP6Z13TR supports a pulsed collector current of 6A for both NPN and PNP elements under single-pulse conditions.
How does the saturation voltage vary with temperature?
Collector-emitter saturation voltage increases at elevated temperatures, as shown in the characteristic curves where values rise significantly at 125°C compared to 25°C.
What is the typical DC current gain range?
The DC current gain (hFE) typically ranges from 180 to 450 when measured at a collector current of 50mA and VCE of 3V.
