RF Diode MPN7453B-T83 product image

MPN7453B-T83

  • Description:RF DIODE PIN 400V DIE
  • Series:-

SKU:82aa96afb4d9 Category: Brand:

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MPN7453B-T83 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE PIN 400V DIE. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MPN7453B-T83

  • Description:RF DIODE PIN 400V DIE
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):400V
  • Current - Max:-
  • Capacitance @ Vr, F:0.2pF @ 50V, 100MHz
  • Resistance @ If, F:900mOhm @ 100mA, 100MHz
  • Power Dissipation (Max):-
  • Operating Temperature:175°C (TJ)
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MPN7453B-T83

MPN7453B-T83

RF Diode Overview

The MPN7453B-T83 is a high-power silicon PIN diode manufactured by MACOM Technology Solutions. It is designed for demanding RF applications requiring robust switching capabilities. The component features a peak reverse voltage rating of 400V, ensuring reliable operation under high-voltage conditions. It exhibits a forward resistance of 900mOhm at 100mA and 100MHz, providing efficient conduction characteristics. Additionally, the device offers a low capacitance of 0.2pF at 50V and 100MHz, which minimizes signal leakage in the off-state. The junction temperature rating reaches 175°C, supporting thermal stability in high-power environments.

RF Diode Feature Summary

  • High power handling capability with a 400V peak reverse voltage rating
  • Low on-state resistance of 900mOhm for efficient signal transmission
  • Minimal off-state capacitance of 0.2pF to reduce signal loss
  • High thermal tolerance with a maximum junction temperature of 175°C

RF Diode Applications

  • High-power RF switching circuits
  • Attenuator modules requiring precise control
  • Phase shifters in microwave systems
  • Tunable filter implementations

RF Diode Procurement Notes

Verify the specific datasheet version and electrical test conditions directly from MACOM before integration. Confirm that the T83 package designation aligns with your PCB footprint requirements. Ensure that thermal management strategies account for the 175°C junction limit during continuous operation. Cross-reference the 900mOhm resistance value with your system's power dissipation calculations to prevent overheating issues.

RF Diode Selection Notes

Select this component when high voltage isolation and low insertion loss are critical. The 400V rating makes it suitable for high-power transmitters. Consider the 0.2pF capacitance for high-frequency performance needs. Evaluate the thermal constraints against your enclosure design. This die format requires careful mounting considerations compared to packaged alternatives.

RF Diode Part Context

This part belongs to MACOM's high-power silicon PIN diode series. It is engineered for reliability in harsh RF environments. The single diode configuration allows for flexible circuit topologies. It serves as a core switching element in advanced communication infrastructure. The T83 designation indicates a specific die package format.

RF Diode Replacement Considerations

Public confirmed substitute part numbers: MPN7453B-C22.

MPN7453B-T83MPN7453B-T83

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