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Product Detailed Parameters
- Description：TRANS 4NPN QUAD 40V 500MA TO-116
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：4 NPN (Quad)
- Current - Collector (Ic) (Max)：500mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：650mW
- Frequency - Transition：200MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：14-DIP (0.300", 7.62mm)
- Supplier Device Package：TO-116
- Grade：-
- Qualification：-
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Overview
The MPQ2222A PBFREE is a quad NPN silicon transistor array housed in a 14-pin TO-116 DIP package. It contains four independent transistors designed for general-purpose amplifier and switching applications. Key electrical ratings include a collector-emitter voltage of 40 V, continuous collector current of 500 mA, and total power dissipation of 1.9 W. The device features a minimum DC current gain (hFE) of 35 at low currents and up to 300 at higher currents, with a transition frequency of 200 MHz.
Feature Summary
- Contains four independent NPN transistors within a single package
- Designed for general-purpose amplifier and switching applications
- Operates over an extended temperature range from -65°C to +150°C
Applications
- General purpose amplifier circuits
- Digital switching applications
- Low current precision circuits
Procurement Notes
Verify the specific plating configuration required for the application, as the base part number allows for either lead-free or tin/lead plated products depending on availability. Confirm that the 14-pin TO-116 package dimensions align with the target PCB footprint. Ensure the supply chain source provides official datasheets matching the Central Semiconductor specification to guarantee parameter accuracy.
Selection Notes
Select this component when a compact solution for multiple NPN switching or amplification stages is required. Compare the 40 V collector-emitter voltage and 500 mA current limits against circuit requirements. Consider the thermal resistance of 66 °C/W and the 1.9 W total package dissipation for heat management in dense layouts.
Part Context
This component belongs to the MPQ2222 series of quad NPN silicon transistors manufactured by Central Semiconductor Corp. It shares the same internal transistor structure as the standard MPQ2222 but offers improved breakdown voltage characteristics, specifically a higher collector-base voltage rating.
Replacement Considerations
MPQ2222 serves as a direct functional substitute with identical pinout and package, though it has a lower collector-base voltage rating of 60 V compared to the 75 V rating of the MPQ2222A.
