MPQ3725A TIN/LEAD

MPQ3725A TIN/LEAD

  • Description:TRANS 4NPN QUAD 50V 1A TO-116
  • Series:-

SKU:def02fe757b1 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 4NPN QUAD 50V 1A TO-116
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube
  • Transistor Type:4 NPN (Quad)
  • Current - Collector (Ic) (Max):1A
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:450mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 500mA, 2V
  • Power - Max:1W
  • Frequency - Transition:200MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:14-DIP (0.300", 7.62mm)
  • Supplier Device Package:TO-116
  • Grade:-
  • Qualification:-

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MPQ3725A TIN/LEAD

Overview

The MPQ3725A TIN/LEAD is a quad NPN silicon transistor array housed in a 14-pin TO-116 DIP package. It features a collector-emitter voltage (VCEO) of 50 V and a collector-base voltage (VCES) of 70 V, with an emitter-base voltage rating of 5.0 V. The device supports a continuous collector current of 1.0 A and dissipates up to 2.5 W total power across the package. Electrical characteristics include a minimum DC current gain (hFE) of 40 at 100 mA and a transition frequency (fT) of 200 MHz. Operating temperatures range from -65 °C to +150 °C.

Feature Summary

  • Integrates four independent NPN transistors within a single 14-pin TO-116 case for compact core driver applications.

Applications

  • Core driver circuits

Procurement Notes

Verify component authenticity through authorized Central Semiconductor channels or certified distributors. Confirm the specific plating suffix matches project requirements, as the datasheet distinguishes between Tin/Lead and Lead-Free options. Review the manufacturer's standard terms regarding limitations and damages before procurement.

Selection Notes

Select this component when designing multi-transistor logic or driver stages requiring a shared footprint. Ensure the thermal design accommodates the 2.5 W total package dissipation limit. Verify that the 50 V collector-emitter voltage meets the circuit's maximum operating conditions.

Part Context

This part belongs to the MPQ3725 series of quad NPN silicon transistors manufactured by Central Semiconductor Corp. The MPQ3725A variant specifically denotes the version compatible with the 14-pin TO-116 DIP mechanical outline. The series is engineered for high-density integration in digital and switching applications.

Replacement Considerations

Central Semiconductor lists the MPQ3725A as End of Life (EOL) with no direct replacement provided. Contact [email protected] for assistance locating alternate sources if necessary.

FAQ

What is the maximum power dissipation for the entire MPQ3725A package?

The total power dissipation for the package is 2.5 W, while each individual transistor is rated for 1.0 W.

How are the pins configured for the four transistors?

Pins 1-3 correspond to Collector, Base, and Emitter for Q1; Pins 5-7 for Q2; Pins 8-10 for Q3; and Pins 12-14 for Q4. Pins 4, 11, and others not listed are No Connect.

What is the transition frequency (fT) specification?

The transition frequency is specified at 200 MHz under test conditions of VCE=10V, IC=50mA, and f=100MHz.

MPQ3725A TIN/LEADMPQ3725A TIN/LEAD

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