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The MPQ6700 is a silicon-based NPN/PNP quad bipolar junction transistor (BJT) manufactured by Central Semiconductor. It features a TO-116-14 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical parameters include a collector-emitter voltage (VCEO) of 40 V, collector-base voltage (VCBO) of 40 V, and emitter-base voltage (VEBO) of 5 V. The device supports a continuous collector current of 200 mA with a power dissipation rating of 500 mW. Additional specifications include a gain-bandwidth product (fT) of 200 MHz, a minimum DC current gain (hFE) of 70, and a collector-emitter saturation voltage of 250 mV.
Verify the specific manufacturer designation carefully, as public records identify this part number under Central Semiconductor rather than Motorola. Confirm RoHS compliance status, as listed data indicates non-compliance. Check for end-of-life notifications or discontinuance alerts prior to procurement planning. Ensure the tin/lead lead finish matches the required soldering process for the target assembly.
Select this component when a quad BJT configuration is required in a through-hole TO-116-14 package. Verify that the 40 V voltage ratings and 200 mA current limits align with the circuit requirements. Consider the wide operating temperature range for harsh environments. Note that the part is identified as discontinued in some distributor databases.
This component belongs to the MPQ6700 series of dual and quad bipolar transistors. It is categorized under discrete semiconductor devices specifically designed for general-purpose signal processing and switching tasks. The quad arrangement allows for efficient use of board space in multi-transistor topologies.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer channels for qualified alternatives if this component is discontinued.
The maximum power dissipation (Pd) is rated at 500 mW.
Yes, it is a quad configuration containing both NPN and PNP bipolar junction transistors.
The gain-bandwidth product (fT) is specified as 200 MHz.