MPS3392 TRE TIN/LEAD

Single Bipolar Transistors Overview

The MPS3392 TRE TIN/LEAD is a small signal NPN silicon bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92 through-hole package and features a collector-emitter breakdown voltage of 25V. The device supports a maximum continuous collector current of 100mA with a power dissipation rating of 625mW. Its transition frequency is specified at 150MHz, and it operates within a temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• NPN silicon construction for general-purpose switching and amplification
• TO-92 through-hole mounting configuration
• High transition frequency capability

Single Bipolar Transistors Applications

• General-purpose low-power amplification circuits
• Electronic switching applications
• Signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TRE' against official Central Semiconductor documentation to confirm tin/lead plating availability and RoHS status. Confirm lead time and minimum order quantities directly with authorized distributors or the manufacturer, as these details are not included in standard technical datasheets.

Single Bipolar Transistors Selection Notes

Select this component when a 25V NPN transistor with a TO-92 package is required. Ensure the design accommodates the 100mA collector current limit and 625mW power dissipation. Verify that the 150MHz transition frequency meets the circuit's speed requirements.

Single Bipolar Transistors Part Context

This part belongs to the MPS3392 series of small signal transistors from Central Semiconductor. These devices are designed for low-voltage, low-power applications requiring reliable performance in compact through-hole form factors.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching voltage and current ratings. Verify pinout compatibility before implementation.