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The MPS3563RLRA is an NPN silicon small signal bipolar transistor designed for ultra-high frequency applications. It features a maximum collector current of 0.05 A and a collector-emitter voltage rating of 12 V. The device exhibits a minimum DC current gain (hFE) of 20 and a maximum collector capacitance of 1.7 pF. It operates within a temperature range up to 150 °C and utilizes a TO-92 cylindrical plastic package.
Verify the manufacturer origin, as this component has been produced by both Motorola/NXP and onsemi. Confirm that the specific ordering suffix matches the required package variant. Ensure the datasheet corresponds to the exact part number to validate electrical parameters such as hFE and breakdown voltages before integration into designs.
Select this component for designs requiring low-power RF amplification in the ultra-high frequency spectrum. The TO-92 package suits through-hole prototyping and general-purpose circuit boards. Consider the 12 V collector-emitter voltage limit when designing biasing networks for low-voltage RF systems.
This transistor belongs to the MPS3563 family of RF small signal devices. Similar variants include the MPS3563ZL1 and MPS3563RLRB, which share identical core electrical specifications but may differ in packaging or manufacturing origin. These components are standard discrete semiconductors used in vintage and modern RF hardware.
MPS3563ZL1
The maximum collector-emitter voltage (VCEO) is rated at 12 V.
No, it utilizes a TO-92 cylindrical package designed for through-hole mounting.
The minimum DC current gain (hFE) is specified as 20.