MPS3563RLRA

MPS3563RLRA

  • Description:RF TRANS NPN 12V 1.5GHZ TO-92
  • Series:-

SKU:b1e9561f4919 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 1.5GHZ TO-92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:1.5GHz
  • Noise Figure (dB Typ @ f):6.5dB @ 60MHz
  • Gain:14dB @ 200MHz
  • Power - Max:350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 8mA, 10V
  • Current - Collector (Ic) (Max):50mA
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

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MPS3563RLRA

Overview

The MPS3563RLRA is an NPN silicon small signal bipolar transistor designed for ultra-high frequency applications. It features a maximum collector current of 0.05 A and a collector-emitter voltage rating of 12 V. The device exhibits a minimum DC current gain (hFE) of 20 and a maximum collector capacitance of 1.7 pF. It operates within a temperature range up to 150 °C and utilizes a TO-92 cylindrical plastic package.

Feature Summary

  • Engineered for ultra-high frequency band operations
  • Utilizes single-element NPN silicon construction
  • Provides high thermal stability with elevated maximum operating temperature

Applications

  • RF amplifier circuits
  • High-frequency oscillator stages
  • Ultra-high frequency signal processing

Procurement Notes

Verify the manufacturer origin, as this component has been produced by both Motorola/NXP and onsemi. Confirm that the specific ordering suffix matches the required package variant. Ensure the datasheet corresponds to the exact part number to validate electrical parameters such as hFE and breakdown voltages before integration into designs.

Selection Notes

Select this component for designs requiring low-power RF amplification in the ultra-high frequency spectrum. The TO-92 package suits through-hole prototyping and general-purpose circuit boards. Consider the 12 V collector-emitter voltage limit when designing biasing networks for low-voltage RF systems.

Part Context

This transistor belongs to the MPS3563 family of RF small signal devices. Similar variants include the MPS3563ZL1 and MPS3563RLRB, which share identical core electrical specifications but may differ in packaging or manufacturing origin. These components are standard discrete semiconductors used in vintage and modern RF hardware.

Replacement Considerations

MPS3563ZL1

FAQ

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter voltage (VCEO) is rated at 12 V.

Does the MPS3563RLRA support surface mount installation?

No, it utilizes a TO-92 cylindrical package designed for through-hole mounting.

What is the minimum DC current gain specified for this device?

The minimum DC current gain (hFE) is specified as 20.

MPS3563RLRAMPS3563RLRA

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