MPSH10_D75Z

Overview

The MPSH10_D75Z is an NPN silicon RF transistor designed for low noise UHF/VHF amplifiers and high output oscillators. It operates with collector currents between 100 µA and 20 mA in common emitter or base configurations. Key electrical parameters include a collector-emitter voltage of 25 V, a collector-base voltage of 30 V, and a continuous collector current rating of 50 mA. The device features a transition frequency (fT) of 650 MHz at 4.0 mA and 10 V, with a collector-base capacitance of 0.7 pF. Thermal dissipation is rated at 350 mW in a TO-92 package.

Feature Summary

• Optimized for low noise performance in UHF and VHF amplifier applications
• Capable of operation in both common emitter and common base modes
• Designed for use in low frequency drift, high output UHF oscillators

Applications

• Low noise UHF/VHF amplifiers
• High output UHF oscillators
• General purpose switching circuits operating in the VHF/UHF bands

Procurement Notes

Verify the D75Z suffix indicates Tape and Reel Ammo packaging containing 2,000 units per box. Confirm the component is sourced from Process 42 as specified in the datasheet. Ensure the ordering code matches the required lead configuration and orientation for automated assembly processes.

Selection Notes

Select this component when a minimum fT of 650 MHz is required for signal integrity. Verify that the 25 V collector-emitter voltage meets the circuit's maximum operating limits. Consider the 350 mW power dissipation capability relative to the thermal management strategy employed in the final design.

Part Context

This part is manufactured by onsemi, formerly Fairchild Semiconductor. It belongs to the MPSH10 series of NPN silicon transistors. The device is functionally equivalent to the MMBTH10 variant, though package differences exist between the through-hole TO-92 and surface mount SOT-23 options.

Replacement Considerations

Public confirmed substitute part numbers: MMBTH10LT1, MMBTH10.